Simulating the fabrication of aluminium oxide tunnel junctions

Metal-Oxide Interfaces in Magnetic Tunnel Junctions

Metal-oxide interfaces play an important role in spintronics—a new area of microelectronics that exploits spin of electrons in addition to the traditional charge degree of freedom to enhance the performance of existing semiconductor devices. Magnetic tunnel junctions (MTJs) consisting of spin-polarized ferromagnetic electrodes sandwiching an insulating barrier are such promising candidates of s...

GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD

A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO templatebased synthesis method provides a low cost process to fabricate GaN-based nanomaterials fabrication.

Oxide tunnel junctions supporting a two-dimensional electron gas

Fabrication and metrology of novel magnetic tunnel junctions in the ultra-thin barrier limit

Within a broader program of exploring methods to fabricate structures with novel electronic properties at the nanometer scale, we are using highly charged ions (HCIs) to produce ensembles of nano-features within magnetic tunnel junctions (MTJ). Technologically, MTJs are a major component of magnetic random access memory (MRAM) architectures which are expected to eventually replace hard drives a...

Magnetic Tunnel Junctions

Application of Bardeen’s tunneling theory to magnetic tunnel junctions having a general degree of atomic disorder reveals the close relationship between magneto-conduction and voltage-driven pseudo-torque, as well as the thickness dependence of tunnel-polarization factors. Among the results: 1) The torque generally varies as sin θ at constant applied voltage. 2) Whenever polarization factors ar...